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| Datasheet File OCR Text: |
| geometry process details principal device type mj2955 gross die per 4 inch wafer 920 process CP635 power transistor pnp - silicon power transistor chip process glass passivated mesa die size 106 x 106 mils die thickness 12 mils base bonding pad area 25 x 33 mils emitter bonding pad area 30 x 36 mils top side metalization al - 50,000? back side metalization ag - 10,000? backside collector r0 www.centralsemi.com r1 (29-april 2010)
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